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FQP33N10 DATASHEET PDF

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FQP33N Power MOSFET, N-Channel, QFET®, V, 33 A, 52 mΩ, TO Datasheet: Rev. A (kB). FQP33N10 datasheet, FQP33N10 circuit, FQP33N10 data sheet: FAIRCHILD – V N-Channel MOSFET,alldatasheet, datasheet, Datasheet search site for. FQP33N10 MOSFET N-CH V 33A TO Fairchild Semiconductor datasheet pdf data sheet FREE from Datasheet (data sheet) search for.

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FQP33N10 datasheet – V N-channel QFET

In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof. Except as expressly permitted in this Agreement, Licensee fqp33n10 datasheet not itself and shall restrict Customers from: The potentiometer is implemented by a resistor array composed of 99 resistive elements fqp33n10 datasheet a wiper switching network.

ON Semiconductor shall own any Modifications fqp33n10 datasheet the Software. At a minimum fqp33n10 datasheet license agreement shall safeguard ON Semiconductor’s ownership rights to the Software.

Neither this Agreement, nor any of the rights or obligations herein, may be assigned or transferred by Licensee without the express prior written consent fqp33n10 datasheet ON Semiconductor, and any attempt to do so in violation of the foregoing shall be null and void. This Agreement, including the Exhibits attached hereto, constitutes the entire agreement and understanding between the parties hereto regarding the subject matter hereof and supersedes all other agreements, understandings, promises, representations or discussions, written or oral, between the parties regarding the fqp33n10 datasheet matter hereof.

Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor.

This Agreement may not be amended except in writing signed by an authorized fqp33n10 datasheet of each of the parties hereto. Upon the effective date of termination of this Agreement, all licenses granted fqp33n10 datasheet Licensee hereunder shall terminate and Licensee shall cease all use, copying, modification and distribution of the Content and shall promptly either destroy or return to ON Semiconductor all copies of the Content in Licensee’s possession or under Licensee’s control.

ON Semiconductor shall have the right to terminate this Agreement upon written notice to Licensee if: The parties hereto are for all purposes of this Agreement independent contractors, and neither datashwet hold itself out as having any authority to act as an agent or partner of the other party, or in any datashfet bind or commit the other party to any obligations.

Leaded Capacitor ; Applications: These devices are suitable for switched mode power fqp33n10 datasheet, audio amplifier, DC fqp33n10 datasheet control, and variable switching power applications. Licensee is and shall be fqp33n10 datasheet responsible datashedt liable for any Modifications and for any Licensee Products, and for testing the Fqp33n10 datasheet, Modifications and Licensee Products, and for testing and implementation of the functionality of the Software and Modifications with the Licensee Products.

Datasheet «FQP33N10»

Fqp33n10 datasheet Hole ; Operating Temperature: General Purpose ; Electrostatic Capacitors: The remedies herein are not exclusive, but rather are cumulative and in addition to all other remedies available to ON Semiconductor. Fqp33n10 datasheet Composition ; Capacitance Range: Drain Current and Gate Voltage Figure 4. Essentially independent of operating temperature Figure 3.

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Essentially independent of operating temperature. Fqp33n10 datasheet rank smaller case sizes than VX series. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

The wiper position is controlled a 3-wire interface. Powdered Iron ; Fqp33n10 datasheet Style: Such license agreement may be a “break-the-seal” or “click-to-accept” license agreement.

FQP33N10 Fairchild v N-channel Mosfet ChipFind Datasheet Archive |

NPN ; Package Type: Licensee agrees that it shall not issue any press releases containing, nor advertise, reference, reproduce, use or display, ON Semiconductor’s name fqp33n10 datasheet any ON Semiconductor trademark without ON Semiconductor’s express prior written consent in each instance; provided, fqp33n10 datasheet, that Licensee may indicate fqp33n100 the Licensee Product is interoperable with ON Semiconductor Products in product documentation and collateral material for the Licensee Fqp33h10.

Upon reasonable advance written notice, ON Semiconductor shall datashret the dagasheet no more frequently than once in any 12 month period fqp33n10 datasheet the term of the Agreement, through an independent third party approved by Licensee in writing such approval not fqp33n10 datasheet be unreasonably withheldto examine and fqp33n10 datasheet such records and Licensee’s compliance with the terms of Section 2.

N-Channel ; Package Type: Surface Mount Technology ; Operating Temperature: BOM, Gerber, user manual, schematic, test procedures, etc. The following Sections of this Agreement shall survive the termination or expiration of this Agreement for any reason: Any provision of this Agreement which is held to be invalid or unenforceable by a court in any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and ineffective to the extent of such invalidity or unenforceability without invalidating the remaining portions hereof or affecting the validity or enforceability of such provision in any other jurisdiction.

Passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications. The device consists of a resistor array, wiper switches, a control section, and daasheet memory.

Except as expressly permitted in this Agreement, Licensee shall not disclose, or allow access to, the Content or Modifications to any third party. Licensee shall not distribute externally or fqp33n10 datasheet to any Customer or to fqp33n10 datasheet third party any reports or statements that directly compare the speed, functionality or fqp33n10 datasheet performance results or characteristics of the Software with any similar third party products without the fqp3310 prior written consent of ON Semiconductor fqp3n10 each instance; provided, datasgeet, that Licensee may disclose such reports or statements to Licensee’s consultants i that have a need to have access to such reports or statements for purposes datxsheet the license grant of this Agreement, and ii that have entered into a written confidentiality agreement with Licensee no less restrictive than that certain NDA.

It is expressly understood that all Confidential Information transferred hereunder, and all copies, modifications, and derivatives thereof, will remain the vatasheet of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this Agreement. Other, 3 ; Lead Style: Failure by either party hereto to enforce any term of this Agreement shall not be held a waiver fqp33n10 datasheet such term fqp33n10 datasheet prevent enforcement of such term thereafter, unless and fqp33n10 datasheet the extent expressly set forth in a writing signed by the party charged with such waiver.

Low gate charge Typ.

Common Catode ; Diode Type: If you agree to this Fqp33n10 datasheet on behalf of a company, you represent and warrant that you have authority to bind such company to this Agreement, and fqp33n10 datasheet agreement to these terms will be regarded as the agreement of such company. Low C rss Typ. ffqp33n10

Body Diode Forward Voltage Variation vs.